Excelitas PVG series of high power pulsed laser diodes are multi-quantum well devices with active layers fabricated using advanced MOCVD epitaxial growth techniques.
Devices are offered housed in two convenient hermetic package configurations. The “S” style package is a TO-18 style low inductance package (~ 5.2 nH) and the “R” style is a CD 9 mm outline providing increased thermal dissipation with the option of accommodating a rear facet monitor photodiode.
This series of devices are wavelength centered at 1550 nm primarily to take advantage of a significant increase over AlGaAs and InGaAs lasers in the maximum permitted emission level with respect to Laser Institute of America or International Electrotechnical Commission (IEC) requirements.
The output wavelength of this series is well matched to the near peak spectral response of Excelitas InGaAs photodiodes types C30617H, C30618H, C30619H, C30645H and C30662H, amongst others.
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